Samsung Electronics has rebuilt its R&D center after 8 years, specializing in advanced NAND flash memory

Recently, Samsung Electronics, the world's largest storage chip manufacturer, plans to establish a new R&D center this month to develop more advanced NAND flash memory. It is reported that the R&D Park, with a total area of about 109000 square meters, will be responsible for R&DNAND flash memory, wafer OEM, system on a chip and other new technologies. By 2028, Samsung Electronics plans to invest approximately 20 trillion Korean won (approximately 103 billion RMB).

The latest news is that on August 19th, Samsung Electronics held a construction ceremony for the next generation semiconductor research and development (R&D) park in Gyeonggi do, South Korea. The report shows that Samsung Electronics has opened a more advanced NAND flash memory research and development center, which is related to advanced products developed by competitors and fierce competition in the NAND flash memory research and development industry.

South Korean media reported that SK Hynix has announced the development of 238 layers of NAND flash memory, which is expected to be mass-produced in the first half of next year; Meiguang Technology has also completed the development of 232 layer NAND flash memory. If you want to gain an advantage in the future NAND flash memory market, you must constantly develop more advanced products.

According to data from research institutions, Samsung Electronics currently has a much higher share in the NAND flash memory market than other manufacturers. In the first quarter of this year, Samsung Electronics' share reached 35.3%, the second largest manufacturer Kaixia's share was 18.9%, and SK Hynix's share was 18%. Samsung Electronics stated that if a top-level equipment research and development center is established, it is expected to reduce the research and development time of new generation products and improve semiconductor quality.

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